unisonic technologies co., ltd 13n50 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r502-362.c 500v n-channel mosfet ? description the utc 13n50 is an n-channel enhancement mode power mosfet. the device adopts planar stripe and uses dmos technology to minimize and provide lower on-state resistance and faster switching speed. it can also withstand high energy pulse under the avalanche and commutation mode conditions. the utc 13n50 is ideally suitable for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge topology. ? features * r ds(on) =0.48 ? @ v gs = 10 v * ultra low gate charge (typical 43 nc ) * low reverse transfer capacitance ( c rss = typical 20pf ) * fast switching capability * avalanche energy tested * improved dv/dt capability, high ruggedness ? symbol to-220 1 1 to-220f 1 to-220f1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 13n50l-ta3-t 13n50g-ta3-t to-220 g d s tube 13n50l-tf3-t 13n50g-tf3-t to-220f g d s tube 13n50l- tf1-t 13n50g-tf1-t to-220f1 g d s tube
13n50 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-362.c ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 500 v gate-source voltage v gss 30 v continuous drain current i d 13 a pulsed drain current (note 2) i dm 52 a avalanche current (note 2) i ar 13 a single pulsed avalanche energy (note 3) e as 810 mj repetitive avalanche energy (note 2) e ar 17 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns to-220 168 w power dissipation (t c =25c) to-220f p d 48 w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width lim ited by maximum junction temperature 3. l = 9.3ma, i as = 13a, v dd = 50v, r g = 25 ? ,starting t j = 25c 4. i sd 13.a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit to-220 62.5 c/w junction to ambient to-220f ja 62.5 c/w to-220 0.74 c/w junction to case to-220f jc 2.58 c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 500 v drain-source leakage current i dss v ds = 500v, v gs = 0v 1 a v gs = 30v, v ds = 0v 100 na gate-source leakage current i gss v gs = -30v, v ds = 0v -100 na breakdown voltage temperature coefficient bv dss / t j i d = 250 a referenced to 25c 0.5 v/c on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10v, i d = 6.5a 0.33 0.43 ? forward transconductance g fs v ds =50v, i d =6.25a (note 1) 10 s dynamic characteristics input capacitance c iss 1800 2300 pf output capacitance c oss 245 320 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mhz 25 35 pf switching characteristics turn-on delay time t d(on) 40 90 ns turn-on rise time t r 140 290 ns turn-off delay time t d(off) 100 210 ns turn-off fall time t f v dd =250v, i d =13a r g =25 ? (note 1,2) 85 180 ns total gate charge q g 45 60 nc gate-source charge q gs 11 nc gate-drain charge q gd v ds =400v, i d =13a, v gs =10 v (note 1, 2) 22 nc
13n50 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-362.c ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0v, i s = 13 a 1.4 v maximum continuous drain-source diode forward current i s 13 a maximum pulsed drain-source diode forward current i sm 52 a reverse recovery time t rr 290 ns reverse recovery charge q rr v gs = 0v, i s = 13a, di f / dt = 100a/ s (note 1) 2.6 c notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating ambient temperature
13n50 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-362.c ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period i sd fig. 1a peak diode recovery dv/dt test circuit v dd v gs (driver) i sd (d.u.t.) v ds (d.u.t.) body diode forward voltage drop body diode recovery dv/dt body diode reverse current i rm di/dt i fm , body diode forward current gate pulse width d= gate pulse period v sd 10v fig. 1b peak diode recovery dv/dt waveforms
13n50 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-362.c ? test circuits and waveforms (cont.) fig. 2a switching test circuit fig.2b switching waveforms 50k ? 0.3f dut v ds same type as d.u.t. 0.2f 12v v gs 3ma 10v charge q gs q gd q g v gs fig. 3a gate charge test circuit fig. 3b gate charge waveform fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
13n50 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-362.c utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
